Physical device modeling of InP based heterojunction bipolar Transistors

By: Maryam TanveerMaterial type: TextTextPublisher: Islamabad NUST-SEECS 2015Description: 97p. ill.; CD ROMDDC classification: MSEE-4 TAN Online resources: Click here to access online
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Supervisors: Dr. Tauseef Tauqeer, Dr.Hassan Abbas Khan, Hassan Khan, Dr. Usman Younis, Mr. Ahsan Azhar

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