Semiconductor devices / Kanaan Kano.
Publisher: Upper Saddle River, N.J. : Prentice Hall, c1998Description: xv, 480 p. : ill. ; 25 cmISBN: 0023619384 (hc)Subject(s): Telecommunication EngineeringDDC classification: 621.38152,KAN| Item type | Current location | Home library | Shelving location | Call number | URL | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|---|---|---|
Reference
|
Military College of Signals (MCS) | Military College of Signals (MCS) | Reference | 621.38152,KAN (Browse shelf) | Link to resource | Not for loan | Almirah No.21, Shelf No.4 | MCS26959 |
Browsing Military College of Signals (MCS) shelves, Shelving location: Reference Close shelf browser
| 621.381528,COM Compound semiconductor transistors : physics and technology / | 621.38152,FLO Electronic devices conventional current version | 621.38152,HES Advanced theory of semiconductor devices / | 621.38152,KAN Semiconductor devices / | 621.38152,MOU Semiconductor devices explained : using active simulation / | 621.38152,SEM Semiconductor nanostructures for optoelectronic applications / | 621.38152,SIN Semiconductor devices : basic principles / |
Atomic Structure and Quantum Mechanic (Page-1), Energy Band Current Carriers in Semiconductors (Page-24), Intrinsic and Extrinsic Semiconductors (Page-52), Carrier Processes: Drift Diffusion and Generation Recombination (Page-84),The Junction Diode (Page-117), Fabrication Technology (Page-156), Limitations to Ideal Diode Theory (Page-182), Bipolar Transistors 1: Characteristics and First Order Model (Page-212, Bipolar Transistors 2: Limitations Switching Models (Page-256), Junctions Fields Effect Transistor (Page-299), Metal Semiconductor Junction and Devices (Page-323), Metal Oxide Semiconductor File Effect Transistor (Page-385), Optoelectronic (Page-428).
Click on an image to view it in the image viewer
There are no comments on this title.