NUST Institutions Library Catalogue catalog › Details for: MS Thesis:Effect of Absorption Region Thickness on InP/ InGaAs PIN Photodiode

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MS Thesis:Effect of Absorption Region Thickness on InP/ InGaAs PIN Photodiode Jibran Ahmed Abbasi

TextSeries: MS Thesis Computational Science and EngineeringPublisher: Islamabad, RCMS NUST c,2012Description: x,83,p: HB, 25,cmDDC classification: 004.12 JIB

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Item type	Current location	Home library	Shelving location	Call number	Status	Date due	Barcode	Item holds
Thesis	Central Library (CL)	Central Library (CL)	Thesis	005 (Browse shelf)	Available		CL-T-5404
Thesis	School of Interdisciplinary Engineering and Sciences (SINES)	School of Interdisciplinary Engineering and Sciences (SINES)	General Stacks	004.12 JIB (Browse shelf)	Available		RCMS002242

Total holds: 0

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Previous	005 MS/Thesis:Categorizing the Small RNA Transcriptome in the Intra Thoracic Airways of Former Smokers	005 MS Thesis: Probabilistic Formal Modeling And Verification of Real Time Task Scheduling On Multiprocessor	005 MS/Thesis: IN-SITU BLOCKAGE MONITORING OF SENSING LINE	005 MS Thesis:Effect of Absorption Region Thickness on InP/ InGaAs PIN Photodiode	005 Thesis:Image Recognition Using Parallel Neural Architecture	005 ENHANCED ADAPTIVE WINDOW SORTED NEIGHBORHOOD METHOD FOR DUPLICATE DETECTION /	005 FRAMEWORK FOR CLUSTERING OF DENTAL PATIENTS’ RECORDS USING UNSUPERVISED LEARNING TECHNIQUES /	Next

MS Thesis

Shelf No 7 Row No 1

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