Microwave noise in semiconductor devices /
Hans Ludwig Hartnagel, Ramunas Katilius, Arvydas Matulionis.
- New York : Wiley, c2001.
- xviii, 293 p. : ill. ; 25 cm.
Introduction (Page-1), Kinetic Theory of Nonequilibrium Processes (Page-16), Fluctuations: Kinetic Theory (Page-25), Effect of Interelectron Collisions on Fluctuation Phenomena (Page-37), Boltzmann-Langevin Equation (Page-44), Fluctuations and Diffusion (Page-50), Features of Hot-Electron Fluctuation Spectra (Page-62), Experimental Techniques (Page-81), Hot-Electron Microwave Noise in Elementary Semiconductors (Page-96), Hot-Electron Microwave Noise in GaAs and InP (Page-116), Length-Dependent Hot-Electron Noise (Page-128), Hot-Electron Noise in Doped Semiconductors: Theory (Page-147), Electronic Noise in Standard-Doped n-Type GaAs (Page-161), Electron Diffusion in Standard-Doped n-Type GaAs (Page-175), Electronic Subbands in Quantum Wells (Page-181Hot-Electron Noise in ALGaAs/GaAs 2DEG Channels (Page-197), Hot-Electron Noise in InP-Based 2DEG Channels (Page-209), Cutoff Frequencies of Fast and Ultrafast Processes (Page-220), Spatially Inhomogeneous Fluctuations (Page-230), Monte Carlo Approach to Microwave Noise in Devices (Page-245),