01981    a2200253   4500003000500000005001700005010001600022020003600038040000900074082001800083100002100101245010900122260003100231300003600262505106100298511000601359650002001365650003501385700002301420700002601443856009601469856008801565856007401653Nust20220812111120.0  a   00043688  a0471384321 (cloth : alk. paper)  cNust00a621.38133,HAR1 aHartnagel, Hans,10aMicrowave noise in semiconductor devices /cHans Ludwig Hartnagel, Ramunas Katilius, Arvydas Matulionis.  aNew York :bWiley,cc2001.  axviii, 293 p. :bill. ;c25 cm.  aIntroduction (Page-1), Kinetic Theory of Nonequilibrium Processes (Page-16), Fluctuations: Kinetic Theory (Page-25), Effect of Interelectron Collisions on Fluctuation Phenomena (Page-37), Boltzmann-Langevin Equation (Page-44), Fluctuations and Diffusion (Page-50), Features of Hot-Electron Fluctuation Spectra (Page-62), Experimental Techniques (Page-81), Hot-Electron Microwave Noise in Elementary Semiconductors (Page-96), Hot-Electron Microwave Noise in GaAs and InP (Page-116), Length-Dependent Hot-Electron Noise (Page-128), Hot-Electron Noise in Doped Semiconductors: Theory (Page-147), Electronic Noise in Standard-Doped n-Type GaAs (Page-161), Electron Diffusion in Standard-Doped n-Type GaAs (Page-175), Electronic Subbands in Quantum Wells (Page-181Hot-Electron Noise in ALGaAs/GaAs 2DEG Channels (Page-197), Hot-Electron Noise in InP-Based 2DEG Channels (Page-209),  Cutoff Frequencies of Fast and Ultrafast Processes (Page-220), Spatially Inhomogeneous Fluctuations (Page-230), Monte Carlo Approach to Microwave Noise in Devices (Page-245), r   a  0aSemiconductors. 0aTelecommunication Engineering.1 aKatilius, Ramunas.1 aMatulionis, A.d1946-423Contributor biographical informationuhttp://www.loc.gov/catdir/bios/wiley042/00043688.html423Publisher descriptionuhttp://www.loc.gov/catdir/description/wiley034/00043688.html423Table of Contentsuhttp://www.loc.gov/catdir/toc/onix06/00043688.html