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  <titleInfo>
    <title>Semiconductor devices</title>
  </titleInfo>
  <name type="personal">
    <namePart>Kano, Kanaan.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">Upper Saddle River, N.J</placeTerm>
    </place>
    <publisher>Prentice Hall</publisher>
    <dateIssued>c1998</dateIssued>
    <issuance/>
  </originInfo>
  <physicalDescription>
    <extent>xv, 480 p. : ill. ; 25 cm.</extent>
  </physicalDescription>
  <tableOfContents>Atomic Structure and Quantum Mechanic (Page-1), Energy Band Current Carriers in Semiconductors (Page-24), Intrinsic and Extrinsic Semiconductors (Page-52), Carrier Processes: Drift Diffusion and Generation Recombination (Page-84),The Junction Diode (Page-117), Fabrication Technology (Page-156), Limitations to Ideal Diode Theory (Page-182), Bipolar Transistors 1: Characteristics and First Order Model (Page-212, Bipolar Transistors 2: Limitations Switching Models (Page-256), Junctions Fields Effect Transistor (Page-299), Metal Semiconductor Junction and Devices (Page-323), Metal Oxide Semiconductor File Effect Transistor (Page-385), Optoelectronic  (Page-428).</tableOfContents>
  <note type="statement of responsibility">Kanaan Kano.</note>
  <subject authority="lcsh">
    <topic>Telecommunication Engineering</topic>
  </subject>
  <classification authority="ddc">621.38152,KAN</classification>
  <identifier type="isbn">0023619384 (hc)</identifier>
  <identifier type="lccn">97013152</identifier>
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    <recordChangeDate encoding="iso8601">20220812154753.0</recordChangeDate>
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