TY  - GEN
AU  - Kano,Kanaan
TI  - Semiconductor devices
SN  - 0023619384 (hc)
U1  - 621.38152,KAN 
PY  - 1998///
CY  - Upper Saddle River, N.J.
PB  - Prentice Hall
KW  - Telecommunication Engineering
N1  - Atomic Structure and Quantum Mechanic (Page-1), Energy Band Current Carriers in Semiconductors (Page-24), Intrinsic and Extrinsic Semiconductors (Page-52), Carrier Processes: Drift Diffusion and Generation Recombination (Page-84),The Junction Diode (Page-117), Fabrication Technology (Page-156), Limitations to Ideal Diode Theory (Page-182), Bipolar Transistors 1: Characteristics and First Order Model (Page-212, Bipolar Transistors 2: Limitations Switching Models (Page-256), Junctions Fields Effect Transistor (Page-299), Metal Semiconductor Junction and Devices (Page-323), Metal Oxide Semiconductor File Effect Transistor (Page-385), Optoelectronic  (Page-428)
ER  -