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  <titleInfo>
    <title>Advanced theory of semiconductor devices</title>
  </titleInfo>
  <name type="personal">
    <namePart>Hess, Karl</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">Englewood Cliffs, N.J</placeTerm>
    </place>
    <publisher>Prentice-Hall</publisher>
    <dateIssued>c1988</dateIssued>
    <issuance/>
  </originInfo>
  <physicalDescription>
    <extent>xv, 268 p. : ill. ; 24 cm.</extent>
  </physicalDescription>
  <tableOfContents>Brief Review of the Relevant Basic Equations (Page-1), Lattice Vibrations (Page-12), The Symmetry of the Crystal Lattice (Page-21), The Theory of Energy Bands in Crystals (Page-34), Imperfections (Page- 57), Equilibrium Statistics for Electronic and Holes (Page-65), Dielectric Properties of semiconductors (Page-76), Scattering Theory  (Page-81), The Boltzmann Transport Equations and its Approximate Solution (Page- 104), Generation Recombination (Page-117), The Device Equations (Page-130), The Hetero Junction Barrier and Related Transport Problems (Page-142), Diodes (Page-163), Transistors (Page-210), New Types Of Device and Chapters that Have Not Yet been Written (Page-232).</tableOfContents>
  <note type="statement of responsibility">Karl Hess.</note>
  <subject authority="lcsh">
    <topic>Telecommunication Engineering</topic>
  </subject>
  <classification authority="ddc">621.38152,HES</classification>
  <relatedItem type="series">
    <titleInfo>
      <title>Prentice Hall series in solid state physical electronics</title>
    </titleInfo>
  </relatedItem>
  <identifier type="isbn">0130115118 :</identifier>
  <identifier type="lccn">87025491</identifier>
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    <recordChangeDate encoding="iso8601">20220812154200.0</recordChangeDate>
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