TY  - GEN
AU  - Hess,Karl
TI  - Advanced theory of semiconductor devices
SN  - 0130115118 :
U1  - 621.38152,HES 
PY  - 1988///
CY  - Englewood Cliffs, N.J.
PB  - Prentice-Hall
KW  - Telecommunication Engineering
N1  - Brief Review of the Relevant Basic Equations (Page-1), Lattice Vibrations (Page-12), The Symmetry of the Crystal Lattice (Page-21), The Theory of Energy Bands in Crystals (Page-34), Imperfections (Page- 57), Equilibrium Statistics for Electronic and Holes (Page-65), Dielectric Properties of semiconductors (Page-76), Scattering Theory  (Page-81), The Boltzmann Transport Equations and its Approximate Solution (Page- 104), Generation Recombination (Page-117), The Device Equations (Page-130), The Hetero Junction Barrier and Related Transport Problems (Page-142), Diodes (Page-163), Transistors (Page-210), New Types Of Device and Chapters that Have Not Yet been Written (Page-232)
ER  -