01417    a2200217   4500003000500000005001700005010001600022020001700038040000900055082001800064100002300082245005900105260005300164300003300217440006800250505068800318650003501006942001301041999001901054952012601073Nust20220812154200.0  a   87025491  a0130115118 :  cNust00a621.38152,HES1 aHess, Karl,95606110aAdvanced theory of semiconductor devices /cKarl Hess.  aEnglewood Cliffs, N.J. :bPrentice-Hall,cc1988.  axv, 268 p. :bill. ;c24 cm. 0aPrentice Hall series in solid state physical electronics956019  aBrief Review of the Relevant Basic Equations (Page-1), Lattice Vibrations (Page-12), The Symmetry of the Crystal Lattice (Page-21), The Theory of Energy Bands in Crystals (Page-34), Imperfections (Page- 57), Equilibrium Statistics for Electronic and Holes (Page-65), Dielectric Properties of semiconductors (Page-76), Scattering Theory  (Page-81), The Boltzmann Transport Equations and its Approximate Solution (Page- 104), Generation Recombination (Page-117), The Device Equations (Page-130), The Hetero Junction Barrier and Related Transport Problems (Page-142), Diodes (Page-163), Transistors (Page-210), New Types Of Device and Chapters that Have Not Yet been Written (Page-232). 0aTelecommunication Engineering.  cREF2ddc  c175750d175750  00102ddc4070aMCSbMCScREFd2016-12-12o621.38152,HESpMCS678r2016-12-08w2016-12-12yREFzAlmirah No.21, Shelf No.4