01175    a2200229   4500003000500000005001700005010001600022020001700038040000900055082001800064100002800082245008500110260003100195300003300226505040100259650002200660650001300682650003400695740003700729856008900766856009000855Nust20221201131137.0  a   82010842  a0471868337 :  cNust00a621.38171,GHA1 aGhandhi, Sorab Khushro,10aVLSI fabrication principles :bsilicon and gallium arsenide /cSorab K. Ghandhi.  aNew York :bWiley,cc1983.  axi, 665 p. :bill. ;c24 cm.  aMaterial Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639).  0aGallium arsenide. 0aSilicon. 0aTelecommunication Engineering0 aV.L.S.I. fabrication principles.423Publisher descriptionuhttp://www.loc.gov/catdir/enhancements/fy0607/82010842-d.html423Table of contents onlyuhttp://www.loc.gov/catdir/enhancements/fy0607/82010842-t.html