01254 a2200253 4500 Nust 20221201131137.0 82010842 0471868337 : Nust 621.38171,GHA Ghandhi, Sorab Khushro, 103907 VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi. New York : Wiley, c1983. xi, 665 p. : ill. ; 24 cm. Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639). Gallium arsenide. 103908 Silicon. 103909 Telecommunication Engineering V.L.S.I. fabrication principles. Publisher description http://www.loc.gov/catdir/enhancements/fy0607/82010842-d.html Table of contents only http://www.loc.gov/catdir/enhancements/fy0607/82010842-t.html ddc BK 182215 182215 0 0 ddc 0 0 MCS MCS GEN 2016-12-12 621.38152,GHA MCS562 2016-12-08 2016-12-12 BK Almirah No.33, Shelf No.5 0 0 ddc 0 0 MCS MCS GEN 2016-12-12 621.38152,GHA MCS563 2016-12-08 2016-12-12 BK Almirah No.33, Shelf No.5