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  <titleInfo>
    <title>VLSI fabrication principles</title>
    <subTitle>silicon and gallium arsenide</subTitle>
  </titleInfo>
  <titleInfo type="alternative">
    <title>V.L.S.I. fabrication principles</title>
  </titleInfo>
  <name type="personal">
    <namePart>Ghandhi, Sorab Khushro</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>Wiley</publisher>
    <dateIssued>c1983</dateIssued>
    <issuance/>
  </originInfo>
  <physicalDescription>
    <extent>xi, 665 p. : ill. ; 24 cm.</extent>
  </physicalDescription>
  <tableOfContents>Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639). </tableOfContents>
  <note type="statement of responsibility">Sorab K. Ghandhi.</note>
  <subject authority="lcsh">
    <topic>Gallium arsenide</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Silicon</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Telecommunication Engineering</topic>
  </subject>
  <classification authority="ddc">621.38171,GHA</classification>
  <identifier type="isbn">0471868337 :</identifier>
  <identifier type="lccn">82010842</identifier>
  <identifier type="uri">http://www.loc.gov/catdir/enhancements/fy0607/82010842-d.html</identifier>
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