TY  - GEN
AU  - Ghandhi,Sorab Khushro
TI  - VLSI fabrication principles: silicon and gallium arsenide 
SN  - 0471868337 :
U1  - 621.38171,GHA 
PY  - 1983///
CY  - New York
PB  - Wiley
KW  - Gallium arsenide
KW  - Silicon
KW  - Telecommunication Engineering
N1  - Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639).
UR  - http://www.loc.gov/catdir/enhancements/fy0607/82010842-d.html
UR  - http://www.loc.gov/catdir/enhancements/fy0607/82010842-t.html
ER  -