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  <titleInfo>
    <title>Operation and modeling of the MOS transistor</title>
  </titleInfo>
  <name type="personal">
    <namePart>Tsividis, Yannis.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>McGraw-Hill</publisher>
    <dateIssued>c1987</dateIssued>
    <issuance/>
  </originInfo>
  <physicalDescription>
    <extent>xx, 505 p. : ill. ; 25 cm.</extent>
  </physicalDescription>
  <tableOfContents>Semiconductors, Contacts And Pn Junction (Page-1), The Two Terminal MOS Structure (Page-35), The Three Terminal MOS Structure (Page-75), The Four Terminal MOS Transistor (Page-102), Short Channel And Narrow Channel Effects (Page-168), MOS Transistors With Ion Implanted Channels (Page-217), The MOS Transistor In Dynamic Operation Large Signal Modeling (Page-249), Small Signal Modeling For Low And Medium Frequencies (Page-289), High Frequency Small Signal Models (Page-353), MOS Transistor Fabrication (Page-409).</tableOfContents>
  <note type="statement of responsibility">Yannis P. Tsividis.</note>
  <subject authority="lcsh">
    <topic>Telecommunication Engineering</topic>
  </subject>
  <classification authority="ddc">621.381522,TSI</classification>
  <relatedItem type="series">
    <titleInfo>
      <title>McGraw-Hill series in electrical engineering</title>
    </titleInfo>
  </relatedItem>
  <relatedItem type="series">
    <titleInfo>
      <title>McGraw-Hill series in electrical engineering</title>
    </titleInfo>
  </relatedItem>
  <identifier type="isbn">007065381X</identifier>
  <identifier type="lccn">86027389</identifier>
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    <recordChangeDate encoding="iso8601">20221202181807.0</recordChangeDate>
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