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  <titleInfo>
    <title>MOS and special-purpose bipolar integrated circuits and R-F power transistor circuit design</title>
  </titleInfo>
  <name type="personal">
    <namePart>Norris, Bryan.</namePart>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">New York</placeTerm>
    </place>
    <publisher>McGraw Hill</publisher>
    <dateIssued>c1976</dateIssued>
    <issuance/>
  </originInfo>
  <physicalDescription>
    <extent>228 p. : ill. ; 26 cm.</extent>
  </physicalDescription>
  <tableOfContents>MOS Integrated Circuits (Page-1), Special Purpose Dipolar Integrated Circuits (Page-72), Field Effect Transistors (Page-133), Radio Frequency Power Applications (Page-191).</tableOfContents>
  <note type="statement of responsibility">edited by Bryan Norris.</note>
  <subject authority="lcsh">
    <topic>Field-effect transistors</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Metal oxide semiconductors</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Telecommunication Engineering</topic>
  </subject>
  <classification authority="ddc">621.38153,MOS</classification>
  <relatedItem type="series">
    <titleInfo>
      <title>Texas Instruments electronics series</title>
    </titleInfo>
  </relatedItem>
  <identifier type="isbn">0070637512 :</identifier>
  <identifier type="lccn">76041175</identifier>
  <recordInfo>
    <recordContentSource authority="marcorg"/>
    <recordChangeDate encoding="iso8601">20221202124117.0</recordChangeDate>
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