Device electronics for integrated circuits / Richard S. Muller, Theodore I. Kamins, with Mansun Chan.
Publisher: New York, NY : John Wiley & Sons, Inc., c2003Edition: 3rd edDescription: xviii, 528 p. : ill. ; 26 cmISBN: 0471593982 (cloth : alk. paper)Subject(s): Integrated circuits | Telecommunication EngineeringDDC classification: 621.38152,MUL Online resources: Publisher description | Table of contents
Contents:
Semiconductors Electronic (Page -2), Silicon Technology (Page -56), Metal Semiconductor Contacts (Page -140), PN Junctions (Page -175), Currents in pn Junctions (Page -227), Bipolar Transistors I: Basic Properties (Page -279), Bioplar Transistor II: Limitations and Models (Page -325), Properties of the Metal Oxide Silicon Systems (Page -381), MOS Field Effect Transistors I: Physical Effects and Models (Page -429), MOS Field Effect Transistors II: High Field Effects (Page -483), Answers to Selected Problems (Page -517).
| Item type | Current location | Home library | Shelving location | Call number | URL | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|---|---|---|
Book
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Military College of Signals (MCS) | Military College of Signals (MCS) | General Stacks | 621.38152,MUL (Browse shelf) | Link to resource | Available | Almirah No.33, Shelf No.5 | MCS30339 |
Total holds: 0
Semiconductors Electronic (Page -2), Silicon Technology (Page -56), Metal Semiconductor Contacts (Page -140), PN Junctions (Page -175), Currents in pn Junctions (Page -227), Bipolar Transistors I: Basic Properties (Page -279), Bioplar Transistor II: Limitations and Models (Page -325), Properties of the Metal Oxide Silicon Systems (Page -381), MOS Field Effect Transistors I: Physical Effects and Models (Page -429), MOS Field Effect Transistors II: High Field Effects (Page -483), Answers to Selected Problems (Page -517).
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