VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.
Publisher: New York : Wiley, c1983Description: xi, 665 p. : ill. ; 24 cmISBN: 0471868337 :Subject(s): Gallium arsenide | Silicon | Telecommunication EngineeringDDC classification: 621.38171,GHA Online resources: Publisher description | Table of contents only
Contents:
Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639).
| Item type | Current location | Home library | Shelving location | Call number | URL | Status | Notes | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|---|---|---|---|
Book
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Military College of Signals (MCS) | Military College of Signals (MCS) | General Stacks | 621.38152,GHA (Browse shelf) | Link to resource | Available | Almirah No.33, Shelf No.5 | MCS562 | ||
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Book
|
Military College of Signals (MCS) | Military College of Signals (MCS) | General Stacks | 621.38152,GHA (Browse shelf) | Link to resource | Available | Almirah No.33, Shelf No.5 | MCS563 |
Total holds: 0
Material Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639).
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