000			02065 a2200277 4500
003			Nust
005			20220812111120.0
010			_a 00043688
020			_a0471384321 (cloth : alk. paper)
040			_cNust
082	0	0	_a621.38133,HAR
100	1		_aHartnagel, Hans, _996959
245	1	0	_aMicrowave noise in semiconductor devices / _cHans Ludwig Hartnagel, Ramunas Katilius, Arvydas Matulionis.
260			_aNew York : _bWiley, _cc2001.
300			_axviii, 293 p. : _bill. ; _c25 cm.
505			_aIntroduction (Page-1), Kinetic Theory of Nonequilibrium Processes (Page-16), Fluctuations: Kinetic Theory (Page-25), Effect of Interelectron Collisions on Fluctuation Phenomena (Page-37), Boltzmann-Langevin Equation (Page-44), Fluctuations and Diffusion (Page-50), Features of Hot-Electron Fluctuation Spectra (Page-62), Experimental Techniques (Page-81), Hot-Electron Microwave Noise in Elementary Semiconductors (Page-96), Hot-Electron Microwave Noise in GaAs and InP (Page-116), Length-Dependent Hot-Electron Noise (Page-128), Hot-Electron Noise in Doped Semiconductors: Theory (Page-147), Electronic Noise in Standard-Doped n-Type GaAs (Page-161), Electron Diffusion in Standard-Doped n-Type GaAs (Page-175), Electronic Subbands in Quantum Wells (Page-181Hot-Electron Noise in ALGaAs/GaAs 2DEG Channels (Page-197), Hot-Electron Noise in InP-Based 2DEG Channels (Page-209), Cutoff Frequencies of Fast and Ultrafast Processes (Page-220), Spatially Inhomogeneous Fluctuations (Page-230), Monte Carlo Approach to Microwave Noise in Devices (Page-245), _r
511			_a
650		0	_aSemiconductors. _911016
650		0	_aTelecommunication Engineering.
700	1		_aKatilius, Ramunas. _996960
700	1		_aMatulionis, A. _d1946- _996961
856	4	2	_3Contributor biographical information _uhttp://www.loc.gov/catdir/bios/wiley042/00043688.html
856	4	2	_3Publisher description _uhttp://www.loc.gov/catdir/description/wiley034/00043688.html
856	4	2	_3Table of Contents _uhttp://www.loc.gov/catdir/toc/onix06/00043688.html
942			_cREF _2ddc
999			_c175659 _d175659