| 000 | 01172 a2200193 4500 | ||
|---|---|---|---|
| 003 | Nust | ||
| 005 | 20220812154753.0 | ||
| 010 | _a 97013152 | ||
| 020 | _a0023619384 (hc) | ||
| 040 | _cNust | ||
| 082 | 0 | 0 | _a621.38152,KAN |
| 100 | 1 |
_aKano, Kanaan. _997035 |
|
| 245 | 1 | 0 |
_aSemiconductor devices / _cKanaan Kano. |
| 260 |
_aUpper Saddle River, N.J. : _bPrentice Hall, _cc1998. |
||
| 300 |
_axv, 480 p. : _bill. ; _c25 cm. |
||
| 505 | _aAtomic Structure and Quantum Mechanic (Page-1), Energy Band Current Carriers in Semiconductors (Page-24), Intrinsic and Extrinsic Semiconductors (Page-52), Carrier Processes: Drift Diffusion and Generation Recombination (Page-84),The Junction Diode (Page-117), Fabrication Technology (Page-156), Limitations to Ideal Diode Theory (Page-182), Bipolar Transistors 1: Characteristics and First Order Model (Page-212, Bipolar Transistors 2: Limitations Switching Models (Page-256), Junctions Fields Effect Transistor (Page-299), Metal Semiconductor Junction and Devices (Page-323), Metal Oxide Semiconductor File Effect Transistor (Page-385), Optoelectronic (Page-428). | ||
| 650 | 0 | _aTelecommunication Engineering. | |
| 942 |
_cREF _2ddc |
||
| 999 |
_c175668 _d175668 |
||