000			01279 a2200205 4500
003			Nust
005			20220812154200.0
010			_a 87025491
020			_a0130115118 :
040			_cNust
082	0	0	_a621.38152,HES
100	1		_aHess, Karl, _956061
245	1	0	_aAdvanced theory of semiconductor devices / _cKarl Hess.
260			_aEnglewood Cliffs, N.J. : _bPrentice-Hall, _cc1988.
300			_axv, 268 p. : _bill. ; _c24 cm.
440		0	_aPrentice Hall series in solid state physical electronics _956019
505			_aBrief Review of the Relevant Basic Equations (Page-1), Lattice Vibrations (Page-12), The Symmetry of the Crystal Lattice (Page-21), The Theory of Energy Bands in Crystals (Page-34), Imperfections (Page- 57), Equilibrium Statistics for Electronic and Holes (Page-65), Dielectric Properties of semiconductors (Page-76), Scattering Theory (Page-81), The Boltzmann Transport Equations and its Approximate Solution (Page- 104), Generation Recombination (Page-117), The Device Equations (Page-130), The Hetero Junction Barrier and Related Transport Problems (Page-142), Diodes (Page-163), Transistors (Page-210), New Types Of Device and Chapters that Have Not Yet been Written (Page-232).
650		0	_aTelecommunication Engineering.
942			_cREF _2ddc
999			_c175750 _d175750