000			01502 a2200229 4500
003			Nust
005			20221128153729.0
010			_a 93016841
020			_a0471584894 (cloth : alk. paper)
040			_cNust
082	0	0	_a621.3815,ELE
245	0	0	_aElectromigration and electronic device degradation / _cedited by Aris Christou.
260			_aNew York : _bWiley, _cc1994.
300			_axiv, 343 p. : _bill. ; _c25 cm.
505			_aReliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (Page-1), Simulation and Computer Models for Electromigration (Page-27), Temperature Dependencies on Electromigration (Page-79), Electromigration and Related Failure Mechanisms in VLSI Metallizations (Page-105),Metallic Electromigration Phenomena (Page-139), Theoretical and Experimental Study of Electromigration (Page-167), GaAs on Silicon Performance and Reliability (Page-235),Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (Page-263), Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (Page-291), Reliable Metallization for VLSI (Page-317). _g
650		0	_aTelecommunication Engineering.
700	1		_aChristou, A. _9103714
740	0		_aElectromigration & electronic device degradation.
856	4	2	_3Publisher description _uhttp://www.loc.gov/catdir/description/wiley032/93016841.html
856	4	2	_3Table of Contents _uhttp://www.loc.gov/catdir/toc/onix03/93016841.html
942			_cREF _2ddc
999			_c178591 _d178591