| 000 | 01254 a2200253 4500 | ||
|---|---|---|---|
| 003 | Nust | ||
| 005 | 20221201131137.0 | ||
| 010 | _a 82010842 | ||
| 020 | _a0471868337 : | ||
| 040 | _cNust | ||
| 082 | 0 | 0 | _a621.38171,GHA |
| 100 | 1 |
_aGhandhi, Sorab Khushro, _9103907 |
|
| 245 | 1 | 0 |
_aVLSI fabrication principles : _bsilicon and gallium arsenide / _cSorab K. Ghandhi. |
| 260 |
_aNew York : _bWiley, _cc1983. |
||
| 300 |
_axi, 665 p. : _bill. ; _c24 cm. |
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| 505 | _aMaterial Properties (Page-1), Phase Diagrams and Solid Solubility (Page-49), Crystal Growth and Doping (Page-81), Diffusion (Page-111), Epitaxy (Page-213), Ion Implantation (Page-299), Native Oxide Films (Page-371), Deposits Films (Page-419), Etching and Cleaning (Page-475), Lithographic Processes (Page-533), Device and Circuits Fabrication (Page-567), The Mathematics of Diffusion (Page-639). | ||
| 650 | 0 |
_aGallium arsenide. _9103908 |
|
| 650 | 0 |
_aSilicon. _9103909 |
|
| 650 | 0 | _aTelecommunication Engineering | |
| 740 | 0 | _aV.L.S.I. fabrication principles. | |
| 856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/enhancements/fy0607/82010842-d.html |
| 856 | 4 | 2 |
_3Table of contents only _uhttp://www.loc.gov/catdir/enhancements/fy0607/82010842-t.html |
| 942 |
_2ddc _cBK |
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| 999 |
_c182215 _d182215 |
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