| 000 | 01169 a2200217 4500 | ||
|---|---|---|---|
| 003 | Nust | ||
| 005 | 20221202181807.0 | ||
| 010 | _a 86027389 | ||
| 020 | _a007065381X | ||
| 040 | _cNust | ||
| 082 | 0 | 0 | _a621.381522,TSI |
| 100 | 1 |
_aTsividis, Yannis. _960163 |
|
| 245 | 1 | 0 |
_aOperation and modeling of the MOS transistor / _cYannis P. Tsividis. |
| 260 |
_aNew York : _bMcGraw-Hill, _cc1987. |
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| 300 |
_axx, 505 p. : _bill. ; _c25 cm. |
||
| 440 | 0 |
_aMcGraw-Hill series in electrical engineering. _920188 |
|
| 440 | 0 |
_aMcGraw-Hill series in electrical engineering. _920188 |
|
| 505 | _aSemiconductors, Contacts And Pn Junction (Page-1), The Two Terminal MOS Structure (Page-35), The Three Terminal MOS Structure (Page-75), The Four Terminal MOS Transistor (Page-102), Short Channel And Narrow Channel Effects (Page-168), MOS Transistors With Ion Implanted Channels (Page-217), The MOS Transistor In Dynamic Operation Large Signal Modeling (Page-249), Small Signal Modeling For Low And Medium Frequencies (Page-289), High Frequency Small Signal Models (Page-353), MOS Transistor Fabrication (Page-409). | ||
| 650 | 0 | _aTelecommunication Engineering | |
| 942 |
_2ddc _cBK |
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| 999 |
_c182318 _d182318 |
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